Infineon FP35R12W2T4B11BOMA1 3 Phase Bridge IGBT Module, 54 A 1200 V, 35-Pin EASY2B, PCB Mount
技術文件
規格
Brand
InfineonMaximum Continuous Collector Current
54 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
215 W
Package Type
EASY2B
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
35
Switching Speed
1MHz
Transistor Configuration
3 Phase
Dimensions
56.7 x 48 x 12mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
產品詳情
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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472.00 MOP
471.97 MOP Each (不含稅)
1
472.00 MOP
471.97 MOP Each (不含稅)
暫時無法取得庫存資訊。
1
暫時無法取得庫存資訊。
| 數量 | 單價 |
|---|---|
| 1 - 3 | 471.97 MOP |
| 4 - 7 | 460.17 MOP |
| 8+ | 453.08 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
- 查看網站內容和論壇
- 下載超過一百萬種產品的 3D 模型、原理圖和封裝
技術文件
規格
Brand
InfineonMaximum Continuous Collector Current
54 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
215 W
Package Type
EASY2B
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
35
Switching Speed
1MHz
Transistor Configuration
3 Phase
Dimensions
56.7 x 48 x 12mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
產品詳情
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
- 查看網站內容和論壇
- 下載超過一百萬種產品的 3D 模型、原理圖和封裝