onsemi PowerTrench N-Channel MOSFET, 12 A, 150 V, 8-Pin PQFN8 FDMS86252L

RS 庫存號: 864-8461P品牌: onsemi製造商零件號: FDMS86252L
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技術文件

規格

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

150 V

Series

PowerTrench

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

5.85mm

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.05mm

產品詳情

PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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402.40 MOP

78.42 MOP Each (Supplied on a Reel) (不含稅)

onsemi PowerTrench N-Channel MOSFET, 12 A, 150 V, 8-Pin PQFN8 FDMS86252L
選擇包裝類型

402.40 MOP

78.42 MOP Each (Supplied on a Reel) (不含稅)

onsemi PowerTrench N-Channel MOSFET, 12 A, 150 V, 8-Pin PQFN8 FDMS86252L

暫時無法取得庫存資訊。

選擇包裝類型

暫時無法取得庫存資訊。

數量單價
150 - 29978.42 MOP
300+77.29 MOP

醞釀。 創造。 合作

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無隱藏費用!

design-spark
design-spark
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  • 查看網站內容和論壇
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技術文件

規格

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

150 V

Series

PowerTrench

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

5.85mm

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.05mm

產品詳情

PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多