技術文件
規格
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
162 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
348 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +25 V
Width
4.82mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
56 nC @ 20 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4V
Automotive Standard
AEC-Q101
89.00 MOP
89.04 MOP Each (不含稅)
標準
1
89.00 MOP
89.04 MOP Each (不含稅)
暫時無法取得庫存資訊。
標準
1
暫時無法取得庫存資訊。
數量 | 單價 |
---|---|
1 - 7 | 89.04 MOP |
8 - 14 | 86.77 MOP |
15+ | 85.53 MOP |
技術文件
規格
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
162 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
348 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +25 V
Width
4.82mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
56 nC @ 20 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4V
Automotive Standard
AEC-Q101