技術文件
規格
Brand
Semikron DanfossMaximum Continuous Collector Current
265 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
產品詳情
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
990.50 MOP
990.52 MOP Each (不含稅)
1
990.50 MOP
990.52 MOP Each (不含稅)
暫時無法取得庫存資訊。
1
暫時無法取得庫存資訊。
數量 | 單價 |
---|---|
1 - 4 | 990.52 MOP |
5 - 9 | 950.95 MOP |
10 - 24 | 911.27 MOP |
25+ | 891.49 MOP |
技術文件
規格
Brand
Semikron DanfossMaximum Continuous Collector Current
265 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
產品詳情
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.