Infineon HEXFET P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC IRF9317TRPBF
技術文件
規格
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Series
HEXFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
5mm
Typical Gate Charge @ Vgs
31 nC @ 4.5 V, 61 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.5mm
Minimum Operating Temperature
-55 °C
產品詳情
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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2,302.10 MOP
112.22 MOP Each (Supplied on a Reel) (不含稅)
生產包 (卷)
20
2,302.10 MOP
112.22 MOP Each (Supplied on a Reel) (不含稅)
暫時無法取得庫存資訊。
生產包 (卷)
20
暫時無法取得庫存資訊。
| 數量 | 單價 |
|---|---|
| 50 - 99 | 112.22 MOP |
| 100+ | 110.57 MOP |
醞釀。 創造。 合作
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技術文件
規格
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Series
HEXFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
5mm
Typical Gate Charge @ Vgs
31 nC @ 4.5 V, 61 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.5mm
Minimum Operating Temperature
-55 °C
產品詳情
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
- 查看網站內容和論壇
- 下載超過一百萬種產品的 3D 模型、原理圖和封裝