技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220
Series
MDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
4.6mm
Height
15.75mm
產品詳情
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
43.10 MOP
43.07 MOP Each (不含稅)
標準
1
43.10 MOP
43.07 MOP Each (不含稅)
暫時無法取得庫存資訊。
標準
1
暫時無法取得庫存資訊。
數量 | 單價 |
---|---|
1 - 12 | 43.07 MOP |
13 - 24 | 41.94 MOP |
25+ | 41.32 MOP |
技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220
Series
MDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
4.6mm
Height
15.75mm
產品詳情