Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1

RS 庫存號: 827-5344P品牌: Infineon製造商零件號: BSC052N03LSATMA1
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技術文件

規格

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

5.35mm

Length

6.1mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

產品詳情

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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3,438.80 MOP

Each (Supplied on a Reel) (不含稅)

Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1
選擇包裝類型

3,438.80 MOP

Each (Supplied on a Reel) (不含稅)

Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1

暫時無法取得庫存資訊。

選擇包裝類型

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
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技術文件

規格

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

5.35mm

Length

6.1mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

產品詳情

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多