技術文件
規格
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ 3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0015 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
16,834,701.40 MOP
Each (On a Reel of 1000) (不含稅)
Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1
1000
16,834,701.40 MOP
Each (On a Reel of 1000) (不含稅)
Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1
暫時無法取得庫存資訊。
1000
暫時無法取得庫存資訊。
技術文件
規格
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ 3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0015 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1