Wolfspeed Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge CAS300M17BM2

RS 庫存號: 916-3876品牌: Wolfspeed製造商零件號: CAS300M17BM2
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技術文件

規格

Channel Type

N

Maximum Continuous Drain Current

325 A

Maximum Drain Source Voltage

1700 V

Package Type

Half Bridge

Mounting Type

Screw Mount

Pin Count

7

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

1.76 kW

Transistor Configuration

Series

Maximum Gate Source Voltage

-10 V, +25 V

Width

61.4mm

Transistor Material

SiC

Number of Elements per Chip

2

Length

106.4mm

Typical Gate Charge @ Vgs

1076 nC @ 20 V, 1076 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

30mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

2.5V

產品詳情

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

MOSFET Transistors, Wolfspeed

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11,478.50 MOP

11,478.53 MOP Each (不含稅)

Wolfspeed Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge CAS300M17BM2

11,478.50 MOP

11,478.53 MOP Each (不含稅)

Wolfspeed Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge CAS300M17BM2

暫時無法取得庫存資訊。

暫時無法取得庫存資訊。

數量單價
1 - 211,478.53 MOP
3 - 411,248.94 MOP
5+11,023.98 MOP

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
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技術文件

規格

Channel Type

N

Maximum Continuous Drain Current

325 A

Maximum Drain Source Voltage

1700 V

Package Type

Half Bridge

Mounting Type

Screw Mount

Pin Count

7

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

1.76 kW

Transistor Configuration

Series

Maximum Gate Source Voltage

-10 V, +25 V

Width

61.4mm

Transistor Material

SiC

Number of Elements per Chip

2

Length

106.4mm

Typical Gate Charge @ Vgs

1076 nC @ 20 V, 1076 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

30mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

2.5V

產品詳情

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

MOSFET Transistors, Wolfspeed

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多