技術文件
規格
Brand
Semikron DanfossMaximum Continuous Collector Current
422 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
2
Configuration
Dual
Package Type
SEMITRANS3
Mounting Type
Screw Mount
Channel Type
N
Pin Count
7
Switching Speed
12kHz
Transistor Configuration
Half Bridge
Dimensions
106.4 x 61.4 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
原產地
Slovakia
產品詳情
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
2,396.60 MOP
2,396.63 MOP Each (不含稅)
1
2,396.60 MOP
2,396.63 MOP Each (不含稅)
暫時無法取得庫存資訊。
1
暫時無法取得庫存資訊。
數量 | 單價 |
---|---|
1 - 1 | 2,396.63 MOP |
2 - 4 | 2,300.80 MOP |
5+ | 2,204.96 MOP |
技術文件
規格
Brand
Semikron DanfossMaximum Continuous Collector Current
422 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
2
Configuration
Dual
Package Type
SEMITRANS3
Mounting Type
Screw Mount
Channel Type
N
Pin Count
7
Switching Speed
12kHz
Transistor Configuration
Half Bridge
Dimensions
106.4 x 61.4 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
原產地
Slovakia
產品詳情
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.