技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
900 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
產品詳情
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
74.20 MOP
36.17 MOP Each (In a Pack of 2) (不含稅)
標準
2
74.20 MOP
36.17 MOP Each (In a Pack of 2) (不含稅)
暫時無法取得庫存資訊。
標準
2
暫時無法取得庫存資訊。
| 數量 | 單價 |
|---|---|
| 7 - 12 | 36.17 MOP |
| 13+ | 35.66 MOP |
技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
900 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
產品詳情


