技術文件
規格
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
73 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
產品詳情
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
476.10 MOP
46.48 MOP Each (Supplied on a Reel) (不含稅)
生產包 (卷)
10
476.10 MOP
46.48 MOP Each (Supplied on a Reel) (不含稅)
暫時無法取得庫存資訊。
生產包 (卷)
10
暫時無法取得庫存資訊。
數量 | 單價 |
---|---|
63 - 124 | 46.48 MOP |
125+ | 45.65 MOP |
技術文件
規格
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
73 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
產品詳情