IXYS Linear N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L

RS 庫存號: 168-4606品牌: IXYS製造商零件號: IXTH12N100L
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技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1000 V

Series

Linear

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.3mm

Number of Elements per Chip

1

Length

16.26mm

Typical Gate Charge @ Vgs

155 nC @ 20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.46mm

原產地

Germany

產品詳情

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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132,269.80 MOP

Each (In a Tube of 30) (不含稅)

IXYS Linear N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L

30

可用的倍數 30
30132,269.80 MOP
60264,539.70 MOP
90396,809.50 MOP
120529,079.30 MOP
150661,349.10 MOP
180793,619.00 MOP
210925,888.80 MOP
2401,058,158.60 MOP
2701,190,428.40 MOP
3001,322,698.30 MOP
3301,454,968.10 MOP
3601,587,237.90 MOP
3901,719,507.80 MOP
4201,851,777.60 MOP
4501,984,047.40 MOP

132,269.80 MOP

Each (In a Tube of 30) (不含稅)

IXYS Linear N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L

暫時無法取得庫存資訊。

30

可用的倍數 30
30132,269.80 MOP
60264,539.70 MOP
90396,809.50 MOP
120529,079.30 MOP
150661,349.10 MOP
180793,619.00 MOP
210925,888.80 MOP
2401,058,158.60 MOP
2701,190,428.40 MOP
3001,322,698.30 MOP
3301,454,968.10 MOP
3601,587,237.90 MOP
3901,719,507.80 MOP
4201,851,777.60 MOP
4501,984,047.40 MOP

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1000 V

Series

Linear

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.3mm

Number of Elements per Chip

1

Length

16.26mm

Typical Gate Charge @ Vgs

155 nC @ 20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.46mm

原產地

Germany

產品詳情

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多