Nexperia PBSS4160DPN,115 Dual NPN/PNP Transistor, 1 A, 60 V, 6-Pin TSOP

RS 庫存號: 485-313品牌: Nexperia製造商零件號: PBSS4160DPN,115
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技術文件

規格

Transistor Type

NPN/PNP

Maximum DC Collector Current

1 A

Maximum Collector Emitter Voltage

60 V

Package Type

TSOP

Mounting Type

Surface Mount

Maximum Power Dissipation

700 mW

Minimum DC Current Gain

250

Transistor Configuration

Isolated

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

220 MHz

Pin Count

6

Number of Elements per Chip

2

Dimensions

1 x 3.1 x 1.7mm

Maximum Operating Temperature

+150 °C

原產地

Malaysia

產品詳情

Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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842.90 MOP

41.01 MOP Each (In a Pack of 20) (不含稅)

Nexperia PBSS4160DPN,115 Dual NPN/PNP Transistor, 1 A, 60 V, 6-Pin TSOP
選擇包裝類型

842.90 MOP

41.01 MOP Each (In a Pack of 20) (不含稅)

Nexperia PBSS4160DPN,115 Dual NPN/PNP Transistor, 1 A, 60 V, 6-Pin TSOP

暫時無法取得庫存資訊。

選擇包裝類型

暫時無法取得庫存資訊。

數量單價
38 - 7441.01 MOP
75+40.40 MOP

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
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請點擊這裡了解更多

技術文件

規格

Transistor Type

NPN/PNP

Maximum DC Collector Current

1 A

Maximum Collector Emitter Voltage

60 V

Package Type

TSOP

Mounting Type

Surface Mount

Maximum Power Dissipation

700 mW

Minimum DC Current Gain

250

Transistor Configuration

Isolated

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

220 MHz

Pin Count

6

Number of Elements per Chip

2

Dimensions

1 x 3.1 x 1.7mm

Maximum Operating Temperature

+150 °C

原產地

Malaysia

產品詳情

Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多