IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2

RS 庫存號: 168-4584品牌: IXYS製造商零件號: IXTN200N10L2
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技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

178 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

Linear L2

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

830 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Maximum Operating Temperature

+150 °C

Length

38.23mm

Typical Gate Charge @ Vgs

540 nC @ 10 V

Number of Elements per Chip

1

Height

9.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

原產地

Philippines

產品詳情

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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37,542.10 MOP

Each (In a Tube of 10) (不含稅)

IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2

10

可用的倍數 10
1037,542.10 MOP
2075,084.30 MOP
30112,626.40 MOP
40150,168.60 MOP
50187,710.70 MOP
60225,252.90 MOP
70262,795.00 MOP
80300,337.20 MOP
90337,879.30 MOP
100375,421.50 MOP
110412,963.60 MOP
120450,505.70 MOP
130488,047.90 MOP
140525,590.00 MOP
150563,132.20 MOP

37,542.10 MOP

Each (In a Tube of 10) (不含稅)

IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2

暫時無法取得庫存資訊。

10

可用的倍數 10
1037,542.10 MOP
2075,084.30 MOP
30112,626.40 MOP
40150,168.60 MOP
50187,710.70 MOP
60225,252.90 MOP
70262,795.00 MOP
80300,337.20 MOP
90337,879.30 MOP
100375,421.50 MOP
110412,963.60 MOP
120450,505.70 MOP
130488,047.90 MOP
140525,590.00 MOP
150563,132.20 MOP

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

178 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

Linear L2

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

830 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Maximum Operating Temperature

+150 °C

Length

38.23mm

Typical Gate Charge @ Vgs

540 nC @ 10 V

Number of Elements per Chip

1

Height

9.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

原產地

Philippines

產品詳情

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多