Nexperia PBSS4130T,215 NPN Transistor, 1 A, 30 V, 3-Pin SOT-23

RS 庫存號: 518-1479品牌: Nexperia製造商零件號: PBSS4130T,215
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技術文件

規格

Transistor Type

NPN

Maximum DC Collector Current

1 A

Maximum Collector Emitter Voltage

30 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

480 mW

Minimum DC Current Gain

350

Transistor Configuration

Single

Maximum Collector Base Voltage

40 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

100 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+150 °C

原產地

China

產品詳情

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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1,393.20 MOP

54.33 MOP Each (In a Pack of 25) (不含稅)

Nexperia PBSS4130T,215 NPN Transistor, 1 A, 30 V, 3-Pin SOT-23

1,393.20 MOP

54.33 MOP Each (In a Pack of 25) (不含稅)

Nexperia PBSS4130T,215 NPN Transistor, 1 A, 30 V, 3-Pin SOT-23

暫時無法取得庫存資訊。

暫時無法取得庫存資訊。

數量單價
30 - 5954.33 MOP
60+53.48 MOP

醞釀。 創造。 合作

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無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
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請點擊這裡了解更多

技術文件

規格

Transistor Type

NPN

Maximum DC Collector Current

1 A

Maximum Collector Emitter Voltage

30 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

480 mW

Minimum DC Current Gain

350

Transistor Configuration

Single

Maximum Collector Base Voltage

40 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

100 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+150 °C

原產地

China

產品詳情

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多