Nexperia PBSS5230T,215 PNP Transistor, -2 A, -30 V, 3-Pin SOT-23

RS 庫存號: 518-1839品牌: Nexperia製造商零件號: PBSS5230T,215
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技術文件

規格

Transistor Type

PNP

Maximum DC Collector Current

-2 A

Maximum Collector Emitter Voltage

-30 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

480 mW

Minimum DC Current Gain

300

Transistor Configuration

Single

Maximum Collector Base Voltage

30 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

200 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+150 °C

原產地

China

產品詳情

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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208.20 MOP

Each (In a Pack of 10) (不含稅)

Nexperia PBSS5230T,215 PNP Transistor, -2 A, -30 V, 3-Pin SOT-23
選擇包裝類型

208.20 MOP

Each (In a Pack of 10) (不含稅)

Nexperia PBSS5230T,215 PNP Transistor, -2 A, -30 V, 3-Pin SOT-23

暫時無法取得庫存資訊。

選擇包裝類型

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Transistor Type

PNP

Maximum DC Collector Current

-2 A

Maximum Collector Emitter Voltage

-30 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

480 mW

Minimum DC Current Gain

300

Transistor Configuration

Single

Maximum Collector Base Voltage

30 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

200 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+150 °C

原產地

China

產品詳情

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多