onsemi FGD3040G2-F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

RS 庫存號: 178-7564品牌: onsemi製造商零件號: FGD3040G2-F085
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技術文件

規格

Brand

onsemi

Maximum Continuous Collector Current

41 A

Maximum Collector Emitter Voltage

300 V

Maximum Gate Emitter Voltage

±10V

Maximum Power Dissipation

150 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

產品詳情

Automotive Ignition IGBT, Fairchild Semiconductor

These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

醞釀。 創造。 合作

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40,058,884.10 MOP

Each (On a Reel of 2500) (不含稅)

onsemi FGD3040G2-F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

2500

可用的倍數 2500
250040,058,884.10 MOP
500080,117,768.20 MOP
7500120,176,652.40 MOP
10000160,235,536.50 MOP
12500200,294,420.60 MOP
15000240,353,304.80 MOP
17500280,412,188.90 MOP
20000320,471,073.00 MOP
22500360,529,957.10 MOP
25000400,588,841.20 MOP
27500440,647,725.40 MOP
30000480,706,609.50 MOP
32500520,765,493.60 MOP
35000560,824,377.80 MOP
37500600,883,261.90 MOP

40,058,884.10 MOP

Each (On a Reel of 2500) (不含稅)

onsemi FGD3040G2-F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

暫時無法取得庫存資訊。

2500

可用的倍數 2500
250040,058,884.10 MOP
500080,117,768.20 MOP
7500120,176,652.40 MOP
10000160,235,536.50 MOP
12500200,294,420.60 MOP
15000240,353,304.80 MOP
17500280,412,188.90 MOP
20000320,471,073.00 MOP
22500360,529,957.10 MOP
25000400,588,841.20 MOP
27500440,647,725.40 MOP
30000480,706,609.50 MOP
32500520,765,493.60 MOP
35000560,824,377.80 MOP
37500600,883,261.90 MOP

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Brand

onsemi

Maximum Continuous Collector Current

41 A

Maximum Collector Emitter Voltage

300 V

Maximum Gate Emitter Voltage

±10V

Maximum Power Dissipation

150 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

產品詳情

Automotive Ignition IGBT, Fairchild Semiconductor

These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多