技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
15.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
4.8mm
產品詳情
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
131.10 MOP
63.89 MOP Each (Supplied on a Reel) (不含稅)
生產包 (卷)
2
131.10 MOP
63.89 MOP Each (Supplied on a Reel) (不含稅)
暫時無法取得庫存資訊。
生產包 (卷)
2
暫時無法取得庫存資訊。
數量 | 單價 |
---|---|
125 - 249 | 63.89 MOP |
250+ | 61.93 MOP |
技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
15.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
4.8mm
產品詳情