Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247AC SiHG30N60E-GE3

RS 庫存號: 787-9421P品牌: Vishay製造商零件號: SiHG30N60E-GE3
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技術文件

規格

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

85 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.82mm

Minimum Operating Temperature

-55 °C

產品詳情

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

MOSFET Transistors, Vishay Semiconductor

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40.90 MOP

40.91 MOP Each (Supplied on a Reel) (不含稅)

Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247AC SiHG30N60E-GE3
選擇包裝類型

40.90 MOP

40.91 MOP Each (Supplied on a Reel) (不含稅)

Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247AC SiHG30N60E-GE3

暫時無法取得庫存資訊。

選擇包裝類型

暫時無法取得庫存資訊。

數量單價
1 - 640.91 MOP
7 - 1239.88 MOP
13+39.37 MOP

醞釀。 創造。 合作

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無隱藏費用!

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技術文件

規格

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

85 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.82mm

Minimum Operating Temperature

-55 °C

產品詳情

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

MOSFET Transistors, Vishay Semiconductor

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多