P-Channel MOSFET, 2.4 A, 20 V, 6-Pin Micro6 Infineon IRLMS6702TRPBF
技術文件
規格
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
20 V
Package Type
Micro6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
375 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Width
1.75mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.3mm
原產地
Thailand
產品詳情
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
Each (Supplied on a Reel) (不含稅)
生產包 (卷)
50
P.O.A.
Each (Supplied on a Reel) (不含稅)
暫時無法取得庫存資訊。
生產包 (卷)
50
暫時無法取得庫存資訊。
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
- 查看網站內容和論壇
- 下載超過一百萬種產品的 3D 模型、原理圖和封裝
技術文件
規格
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
20 V
Package Type
Micro6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
375 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Width
1.75mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.3mm
原產地
Thailand
產品詳情
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
- 查看網站內容和論壇
- 下載超過一百萬種產品的 3D 模型、原理圖和封裝