技術文件
規格
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
5 A
Package Type
TO-220F
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
20
Pin Count
3
Maximum Operating Temperature
+125 °C
Dimensions
10.36 x 4.9 x 16.07mm
產品詳情
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
P.O.A.
Each (Supplied in a Tube) (不含稅)
生產包 (管子)
10
P.O.A.
Each (Supplied in a Tube) (不含稅)
暫時無法取得庫存資訊。
生產包 (管子)
10
暫時無法取得庫存資訊。
技術文件
規格
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
5 A
Package Type
TO-220F
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
20
Pin Count
3
Maximum Operating Temperature
+125 °C
Dimensions
10.36 x 4.9 x 16.07mm
產品詳情
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.