技術文件
規格
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
80 A, 143 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAIR 3 x 3FDC
Pin Count
6
Maximum Drain Source Resistance
0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Series
TrenchFET® Gen IV
P.O.A.
Each (On a Reel of 3000) (不含稅)
Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3
3000
P.O.A.
Each (On a Reel of 3000) (不含稅)
Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3
暫時無法取得庫存資訊。
3000
暫時無法取得庫存資訊。
技術文件
規格
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
80 A, 143 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAIR 3 x 3FDC
Pin Count
6
Maximum Drain Source Resistance
0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Series
TrenchFET® Gen IV