技術文件
規格
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 3.1 A
Maximum Drain Source Voltage
30 V
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
180 mΩ, 330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Length
6.7mm
Typical Gate Charge @ Vgs
3.9 nC @ 10 V, 5.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
產品詳情
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
362.70 MOP
70.69 MOP Each (Supplied on a Reel) (不含稅)
生產包 (卷)
5
362.70 MOP
70.69 MOP Each (Supplied on a Reel) (不含稅)
暫時無法取得庫存資訊。
生產包 (卷)
5
暫時無法取得庫存資訊。
數量 | 單價 |
---|---|
50 - 99 | 70.69 MOP |
100+ | 69.76 MOP |
技術文件
規格
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 3.1 A
Maximum Drain Source Voltage
30 V
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
180 mΩ, 330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Length
6.7mm
Typical Gate Charge @ Vgs
3.9 nC @ 10 V, 5.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
產品詳情