Infineon FF100R12RT4HOSA1 Series IGBT Module, 100 A 1200 V AG-34MM-1, Panel Mount

RS 庫存號: 111-6088品牌: Infineon製造商零件號: FF100R12RT4HOSA1
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技術文件

規格

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

555 W

Package Type

AG-34MM-1

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

Series

Dimensions

94 x 34 x 30.2mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

產品詳情

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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819.20 MOP

819.25 MOP Each (不含稅)

Infineon FF100R12RT4HOSA1 Series IGBT Module, 100 A 1200 V AG-34MM-1, Panel Mount

819.20 MOP

819.25 MOP Each (不含稅)

Infineon FF100R12RT4HOSA1 Series IGBT Module, 100 A 1200 V AG-34MM-1, Panel Mount

暫時無法取得庫存資訊。

暫時無法取得庫存資訊。

數量單價
1 - 2819.25 MOP
3 - 4802.76 MOP
5+786.79 MOP

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

555 W

Package Type

AG-34MM-1

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

Series

Dimensions

94 x 34 x 30.2mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

產品詳情

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多