Infineon 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG
技術文件
規格
Brand
InfineonMemory Size
2Mbit
Organisation
256K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
5 x 6 x 0.7mm
Length
6mm
Width
5mm
Maximum Operating Supply Voltage
3.6 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
256K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
產品詳情
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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145.40 MOP
145.40 MOP Each (不含稅)
標準
1
145.40 MOP
145.40 MOP Each (不含稅)
暫時無法取得庫存資訊。
標準
1
暫時無法取得庫存資訊。
| 數量 | 單價 |
|---|---|
| 1 - 18 | 145.40 MOP |
| 19 - 36 | 142.52 MOP |
| 37+ | 139.63 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
- 查看網站內容和論壇
- 下載超過一百萬種產品的 3D 模型、原理圖和封裝
技術文件
規格
Brand
InfineonMemory Size
2Mbit
Organisation
256K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
5 x 6 x 0.7mm
Length
6mm
Width
5mm
Maximum Operating Supply Voltage
3.6 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
256K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
產品詳情
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
- 查看網站內容和論壇
- 下載超過一百萬種產品的 3D 模型、原理圖和封裝