IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

RS 庫存號: 168-4794品牌: IXYS製造商零件號: MMIX1T550N055T2
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技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

550 A

Maximum Drain Source Voltage

55 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

23.25mm

Length

25.25mm

Typical Gate Charge @ Vgs

595 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

5.7mm

原產地

Germany

產品詳情

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

醞釀。 創造。 合作

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125,055.90 MOP

Each (In a Tube of 20) (不含稅)

IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

20

可用的倍數 20
20125,055.90 MOP
40250,111.80 MOP
60375,167.70 MOP
80500,223.70 MOP
100625,279.60 MOP
120750,335.50 MOP
140875,391.40 MOP
1601,000,447.30 MOP
1801,125,503.20 MOP
2001,250,559.20 MOP
2201,375,615.10 MOP
2401,500,671.00 MOP
2601,625,726.90 MOP
2801,750,782.80 MOP
3001,875,838.70 MOP

125,055.90 MOP

Each (In a Tube of 20) (不含稅)

IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

暫時無法取得庫存資訊。

20

可用的倍數 20
20125,055.90 MOP
40250,111.80 MOP
60375,167.70 MOP
80500,223.70 MOP
100625,279.60 MOP
120750,335.50 MOP
140875,391.40 MOP
1601,000,447.30 MOP
1801,125,503.20 MOP
2001,250,559.20 MOP
2201,375,615.10 MOP
2401,500,671.00 MOP
2601,625,726.90 MOP
2801,750,782.80 MOP
3001,875,838.70 MOP

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

550 A

Maximum Drain Source Voltage

55 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

23.25mm

Length

25.25mm

Typical Gate Charge @ Vgs

595 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

5.7mm

原產地

Germany

產品詳情

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多