IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

RS 庫存號: 168-4791品牌: IXYS製造商零件號: MMIX1T600N04T2
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技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

600 A

Maximum Drain Source Voltage

40 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

23.25mm

Length

25.25mm

Typical Gate Charge @ Vgs

590 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

5.7mm

原產地

Germany

產品詳情

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

醞釀。 創造。 合作

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91,160.10 MOP

Each (In a Tube of 20) (不含稅)

IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

20

可用的倍數 20
2091,160.10 MOP
40182,320.20 MOP
60273,480.30 MOP
80364,640.40 MOP
100455,800.50 MOP
120546,960.50 MOP
140638,120.60 MOP
160729,280.70 MOP
180820,440.80 MOP
200911,600.90 MOP
2201,002,761.00 MOP
2401,093,921.10 MOP
2601,185,081.20 MOP
2801,276,241.30 MOP
3001,367,401.40 MOP

91,160.10 MOP

Each (In a Tube of 20) (不含稅)

IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

暫時無法取得庫存資訊。

20

可用的倍數 20
2091,160.10 MOP
40182,320.20 MOP
60273,480.30 MOP
80364,640.40 MOP
100455,800.50 MOP
120546,960.50 MOP
140638,120.60 MOP
160729,280.70 MOP
180820,440.80 MOP
200911,600.90 MOP
2201,002,761.00 MOP
2401,093,921.10 MOP
2601,185,081.20 MOP
2801,276,241.30 MOP
3001,367,401.40 MOP

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

600 A

Maximum Drain Source Voltage

40 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

23.25mm

Length

25.25mm

Typical Gate Charge @ Vgs

590 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

5.7mm

原產地

Germany

產品詳情

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多