技術文件
規格
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.35mm
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
產品詳情
Dual P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
1,094.40 MOP
35.86 MOP Each (Supplied as a Tape) (不含稅)
標準
30
1,094.40 MOP
35.86 MOP Each (Supplied as a Tape) (不含稅)
暫時無法取得庫存資訊。
標準
30
暫時無法取得庫存資訊。
技術文件
規格
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.35mm
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
產品詳情