onsemi PowerTrench P-Channel MOSFET, 8.2 A, 40 V, 8-Pin SOIC FDS4685

RS 庫存號: 671-0520品牌: onsemi製造商零件號: FDS4685
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技術文件

規格

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

8.2 A

Maximum Drain Source Voltage

40 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

27 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

19 nC @ 5 V

Width

4mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

產品詳情

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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237.50 MOP

46.27 MOP Each (In a Pack of 5) (不含稅)

onsemi PowerTrench P-Channel MOSFET, 8.2 A, 40 V, 8-Pin SOIC FDS4685
選擇包裝類型

237.50 MOP

46.27 MOP Each (In a Pack of 5) (不含稅)

onsemi PowerTrench P-Channel MOSFET, 8.2 A, 40 V, 8-Pin SOIC FDS4685

暫時無法取得庫存資訊。

選擇包裝類型

暫時無法取得庫存資訊。

數量單價
125 - 24946.27 MOP
250+45.65 MOP

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無隱藏費用!

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技術文件

規格

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

8.2 A

Maximum Drain Source Voltage

40 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

27 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

19 nC @ 5 V

Width

4mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

產品詳情

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

醞釀。 創造。 合作

免費加入

無隱藏費用!

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多