onsemi FGH40N60SMDF IGBT, 80 A 600 V, 3-Pin TO-247AB, Through Hole

RS 庫存號: 739-4942P品牌: onsemi製造商零件號: FGH40N60SMDF
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技術文件

規格

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

產品詳情

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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51.00 MOP

50.99 MOP Each (Supplied in a Tube) (不含稅)

onsemi FGH40N60SMDF IGBT, 80 A 600 V, 3-Pin TO-247AB, Through Hole
選擇包裝類型

生產包 (管子)

選擇包裝類型

標準 - each

可用的倍數 1.

生產 -

可用的倍數 1.

建議大批量訂購。 物品經過包裝即可插入機器，提高生產效率。

1

可用的倍數 1
151.00 MOP
2102.00 MOP
3153.00 MOP
4204.00 MOP
5254.90 MOP
6305.90 MOP
7356.90 MOP
8397.80 MOP
9447.50 MOP
10497.20 MOP
11546.90 MOP
12596.70 MOP
13646.40 MOP
14696.10 MOP
15734.10 MOP

51.00 MOP

50.99 MOP Each (Supplied in a Tube) (不含稅)

onsemi FGH40N60SMDF IGBT, 80 A 600 V, 3-Pin TO-247AB, Through Hole

暫時無法取得庫存資訊。

選擇包裝類型

生產包 (管子)

選擇包裝類型

標準 - each

可用的倍數 1.

生產 -

可用的倍數 1.

建議大批量訂購。 物品經過包裝即可插入機器，提高生產效率。

1

可用的倍數 1
151.00 MOP
2102.00 MOP
3153.00 MOP
4204.00 MOP
5254.90 MOP
6305.90 MOP
7356.90 MOP
8397.80 MOP
9447.50 MOP
10497.20 MOP
11546.90 MOP
12596.70 MOP
13646.40 MOP
14696.10 MOP
15734.10 MOP

暫時無法取得庫存資訊。

數量單價
1 - 750.99 MOP
8 - 1449.72 MOP
15+48.94 MOP

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

產品詳情

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多