N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-3PN onsemi FQA28N15
技術文件
規格
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
150 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
227 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
15.8mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
5mm
Series
QFET
Minimum Operating Temperature
-55 °C
Height
20.1mm
產品詳情
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
Each (In a Pack of 5) (不含稅)
標準
5
P.O.A.
Each (In a Pack of 5) (不含稅)
暫時無法取得庫存資訊。
標準
5
暫時無法取得庫存資訊。
醞釀。 創造。 合作
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技術文件
規格
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
150 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
227 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
15.8mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
5mm
Series
QFET
Minimum Operating Temperature
-55 °C
Height
20.1mm
產品詳情
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
- 查看網站內容和論壇
- 下載超過一百萬種產品的 3D 模型、原理圖和封裝