技術文件
規格
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
337 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.82mm
Length
15.87mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
20.82mm
原產地
China
96.00 MOP
96.04 MOP Each (不含稅)
1
96.00 MOP
96.04 MOP Each (不含稅)
暫時無法取得庫存資訊。
1
暫時無法取得庫存資訊。
數量 | 單價 |
---|---|
1 - 7 | 96.04 MOP |
8 - 14 | 93.57 MOP |
15+ | 92.13 MOP |
技術文件
規格
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
337 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.82mm
Length
15.87mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
20.82mm
原產地
China