技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.3mm
Forward Diode Voltage
1.5V
原產地
China
產品詳情
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
392.70 MOP
392.72 MOP Each (Supplied in a Tube) (不含稅)
生產包 (管子)
1
392.70 MOP
392.72 MOP Each (Supplied in a Tube) (不含稅)
暫時無法取得庫存資訊。
生產包 (管子)
1
暫時無法取得庫存資訊。
| 數量 | 單價 |
|---|---|
| 1 - 7 | 392.72 MOP |
| 8 - 14 | 384.99 MOP |
| 15+ | 373.45 MOP |
技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.3mm
Forward Diode Voltage
1.5V
原產地
China
產品詳情


