Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG

Name: Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG
Brand: Taiwan Semiconductor
SKU: 1713628

RS 庫存號: 171-3628品牌: Taiwan Semiconductor製造商零件號: TSM60NB1R4CP ROG

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規格

Brand

Taiwan Semiconductor

Channel Type

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

Minimum Gate Threshold Voltage

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

Width

5.8mm

Length

6.5mm

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

2.3mm

P.O.A.

Each (On a Reel of 2500) (不含稅)

Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG

2500

P.O.A.

Each (On a Reel of 2500) (不含稅)

Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG

暫時無法取得庫存資訊。

2500

暫時無法取得庫存資訊。

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技術文件

規格

Brand

Taiwan Semiconductor

Channel Type

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

Minimum Gate Threshold Voltage

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

Width

5.8mm

Length

6.5mm

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

2.3mm