N-Channel MOSFET Transistor, 28 A, 500 V, 3-Pin TO-3PN Fairchild FQA28N50
技術文件
規格
Channel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
500 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
310 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.8mm
Width
5mm
Minimum Operating Temperature
-55 °C
Height
18.9mm
產品詳情
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
生產包 (管子)
1
P.O.A.
暫時無法取得庫存資訊。
生產包 (管子)
1
暫時無法取得庫存資訊。
醞釀。 創造。 合作
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無隱藏費用！
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技術文件
規格
Channel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
500 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
310 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.8mm
Width
5mm
Minimum Operating Temperature
-55 °C
Height
18.9mm
產品詳情
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
醞釀。 創造。 合作
免費加入
無隱藏費用！
- 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
- 查看網站內容和論壇
- 下載超過一百萬種產品的 3D 模型、原理圖和封裝