技術文件
規格
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.28 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon
50,462,296.90 MOP
Each (On a Reel of 2500) (不含稅)
Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1
2500
50,462,296.90 MOP
Each (On a Reel of 2500) (不含稅)
Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1
暫時無法取得庫存資訊。
2500
暫時無法取得庫存資訊。
技術文件
規格
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.28 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon