技術文件
規格
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
60 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.012 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
3,642,776.30 MOP
Each (On a Reel of 800) (不含稅)
Infineon HEXFET Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF
800
3,642,776.30 MOP
Each (On a Reel of 800) (不含稅)
Infineon HEXFET Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF
暫時無法取得庫存資訊。
800
暫時無法取得庫存資訊。
技術文件
規格
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
60 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.012 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon