Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Country of Origin
China
113.00 MOP
112.96 MOP Each (ex VAT)
Infineon AIM SiC N-Channel MOSFET, 31 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R080M1TXKSA1
1
113.00 MOP
112.96 MOP Each (ex VAT)
Infineon AIM SiC N-Channel MOSFET, 31 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R080M1TXKSA1
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 9 | 112.96 MOP |
| 10 - 99 | 101.67 MOP |
| 100 - 499 | 93.80 MOP |
| 500 - 999 | 86.94 MOP |
| 1000+ | 77.93 MOP |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Country of Origin
China


