Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
92.70 MOP
92.65 MOP Each (ex VAT)
Infineon AIM SiC N-Channel MOSFET, 22 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R120M1TXKSA1
1
92.70 MOP
92.65 MOP Each (ex VAT)
Infineon AIM SiC N-Channel MOSFET, 22 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R120M1TXKSA1
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 9 | 92.65 MOP |
| 10 - 99 | 83.41 MOP |
| 100 - 499 | 76.91 MOP |
| 500 - 999 | 71.31 MOP |
| 1000+ | 63.90 MOP |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China


