Infineon BFR181E6327HTSA1 NPN RF Bipolar Transistor, 20 mA, 12 V, 3-Pin SOT-23

RS Stock No.: 752-8136PBrand: InfineonManufacturers Part No.: BFR181E6327HTSA1
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Technical Document

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

20 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Maximum Power Dissipation

175 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

2.9 x 1.3 x 0.9mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon BFR181E6327HTSA1 NPN RF Bipolar Transistor, 20 mA, 12 V, 3-Pin SOT-23
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Production pack (Reel)

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Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

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10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon BFR181E6327HTSA1 NPN RF Bipolar Transistor, 20 mA, 12 V, 3-Pin SOT-23

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

20 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Maximum Power Dissipation

175 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

2.9 x 1.3 x 0.9mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more