Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
515 W
Number of Transistors
7
Stock information temporarily unavailable.
997.30 MOP
997.32 MOP Each (ex VAT)
Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V
Select packaging type
Standard
1
997.30 MOP
997.32 MOP Each (ex VAT)
Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V
Stock information temporarily unavailable.
Select packaging type
Standard
1
| quantity | Unit price |
|---|---|
| 1 - 1 | 997.32 MOP |
| 2 - 2 | 977.33 MOP |
| 3 - 3 | 957.85 MOP |
| 4 - 4 | 938.68 MOP |
| 5+ | 919.93 MOP |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
515 W
Number of Transistors
7


