Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Package Type
PG-HSOF-8
Series
CoolSiC MOSFET 650 V G1
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
108.60 MOP
108.63 MOP Each (ex VAT)
Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
Select packaging type
Standard
1
108.60 MOP
108.63 MOP Each (ex VAT)
Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 9 | 108.63 MOP |
| 10 - 99 | 97.78 MOP |
| 100 - 499 | 90.14 MOP |
| 500 - 999 | 83.64 MOP |
| 1000+ | 74.97 MOP |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Package Type
PG-HSOF-8
Series
CoolSiC MOSFET 650 V G1
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC


