Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC MOSFET 650 V G1
Package Type
PG-HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
84.60 MOP
84.55 MOP Each (ex VAT)
Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
Select packaging type
Standard
1
84.60 MOP
84.55 MOP Each (ex VAT)
Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 9 | 84.55 MOP |
| 10 - 99 | 76.10 MOP |
| 100 - 499 | 70.18 MOP |
| 500 - 999 | 65.15 MOP |
| 1000+ | 58.31 MOP |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC MOSFET 650 V G1
Package Type
PG-HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC


