Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
254.50 MOP
50.91 MOP Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Select packaging type
Production pack (Reel)
5
254.50 MOP
50.91 MOP Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 5 - 9 | 50.91 MOP |
| 10 - 19 | 49.88 MOP |
| 20 - 49 | 40.91 MOP |
| 50+ | 40.09 MOP |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC


