Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
143 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
278.20 MOP
52.86 MOP Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 IPD023N04NF2SATMA1
Select packaging type
Production pack (Reel)
5
278.20 MOP
52.86 MOP Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 IPD023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 10 - 19 | 52.86 MOP |
| 20 - 49 | 47.61 MOP |
| 50 - 199 | 40.50 MOP |
| 200+ | 32.36 MOP |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
143 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC


