Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
327.70 MOP
62.24 MOP Each (In a Pack of 5) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Select packaging type
Standard
5
327.70 MOP
62.24 MOP Each (In a Pack of 5) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 10 - 19 | 62.24 MOP |
| 20 - 49 | 56.06 MOP |
| 50 - 199 | 47.61 MOP |
| 200+ | 38.13 MOP |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC


