Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
205.10 MOP
38.95 MOP Each (In a Pack of 5) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Select packaging type
Standard
5
205.10 MOP
38.95 MOP Each (In a Pack of 5) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 10 - 19 | 38.95 MOP |
| 20 - 49 | 35.04 MOP |
| 50 - 199 | 29.78 MOP |
| 200+ | 23.80 MOP |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC


