Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS P
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Number of Elements per Chip
1
Width
4.4mm
Length
10mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
15.65mm
Product details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Stock information temporarily unavailable.
1,163.00 MOP
23.26 MOP Each (In a Tube of 50) (ex VAT)
50
1,163.00 MOP
23.26 MOP Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 100 | 23.26 MOP | 1,163.02 MOP |
| 150 - 200 | 22.679 MOP | 1,133.95 MOP |
| 250+ | 22.33 MOP | 1,116.52 MOP |
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS P
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Number of Elements per Chip
1
Width
4.4mm
Length
10mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
15.65mm
Product details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


