Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0065 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
1,027.40 MOP
102.74 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
10
1,027.40 MOP
102.74 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 10 - 24 | 102.74 MOP |
| 25 - 49 | 100.89 MOP |
| 50+ | 99.03 MOP |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0065 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon


